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Power Management Process |
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Main application |
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Widely used in various types of Power IC, such as LDO, DC-DC Buck/Boost converter, AC-DC controller/converter, Charge pump, LED lighting/Driver, Audio Amplifier, Battery Management IC, Gate Driver, Motor Drive … |
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Technology Platform |
- Modularized BCD (Bipolar CMOS DMOS) manufacturing process. Based on CMOS 5V/6V, BCD technology embed high voltage DMOS devices 6V, 12V, 18V, 24V, 30V, 40V, 60V, 80V, 100V, 700V, and low voltage CMOS such as 3.3V, 1.8V, 1.5V & 1.2V and other parasitic BJT, capacitors, and resistors …
- All series of BCD process technology from 0.35um to 55nm node provide selectable Non-Epi, Epi, DTI FEoL structures and BEoL Al and Cu metal options to achieve high performance of low Ron, low Qg spec. for various power product applications.
- Provide embedded SRAM, ROM, OTP, MTP, Flash IP to satisfy all kinds of integrated Power + MCU SOC programs.
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Technology Node |
- 0.35um 5V/40V HV
- 0.18um Non-Epi and Epi BCD platforms :(1.8V, 3.3V)/6V/(12V, 18V, 24V, 30V, 40V, 60V, 80V, 100V & UHV 700V)
- 0.153um Non-Epi BCD series platforms : 1.8V/(3.3V, 5V)/(12V, 20V)
- 130nm Epi BCD platform : 1.5V/5V/5V - 80V
- 110nm Epi BCD platform : 3.3V/3.3V - 40V
- 80nm Epi BCD with DTI platforms : 1.2V/1.8V/5V/5V - 100V
- 55nm Epi BCD platform : 1.2V/5V/29V
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